Configurable bandwidth memory devices and methods

ABSTRACT

Memory devices and methods are described, such as those that include a stack of memory dies and an attached logic die. Method and devices described provide for configuring bandwidth for selected portions of a stack of memory dies. Additional devices, systems, and methods are disclosed.

TECHNICAL FIELD

Various embodiments described herein relate to apparatus, systems, andmethods associated with semiconductor memories.

BACKGROUND

Microprocessor technology has evolved at a faster rate than that ofsemiconductor memory technology. As a result, a mis-match in performanceoften exists between the modern host processor and the semiconductormemory subsystem to which the processor is mated to receive instructionsand data. For example, it is estimated that some high-end servers idlethree out of four clock cycles waiting for responses to memory requests.

In addition, the evolution of software application and operating systemtechnology has increased demand for higher-density memory subsystems asthe number of processor cores and threads continues to increase.However, current-technology memory subsystems often represent acompromise between performance and density. Higher bandwidths may limitthe number of memory cards or modules that may be connected in a systemwithout exceeding Joint Electron Device Engineering Council (JEDEC)electrical specifications.

Extensions to JEDEC interface standards such as dual data rate (DDR)synchronous dynamic random access memory (SDRAM) have been proposed butmay be generally found lacking as to future anticipated memorybandwidths and densities. Weaknesses include lack of memory poweroptimization and the uniqueness of the interface between the hostprocessor and the memory subsystem. The latter weakness may result in aneed to redesign the interface as processor and/or memory technologieschange.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a block diagram of a memory system according to anembodiment of the invention.

FIG. 2 shows a cut-away conceptual view of a stacked-die 3D memory witha logic die according to an embodiment of the invention.

FIG. 3 shows a block diagram of a memory vault controller and associatedmodules according to an embodiment of the invention.

FIG. 4 shows a method of operating a memory device according to anembodiment of the invention.

FIG. 5 shows a block diagram of another memory system according to anembodiment of the invention.

FIG. 6 shows a block diagram of an information handling system accordingto an embodiment of the invention.

DETAILED DESCRIPTION

In the following detailed description of the invention, reference ismade to the accompanying drawings that form a part hereof and in whichis shown, by way of illustration, specific embodiments in which theinvention may be practiced. These embodiments are described insufficient detail to enable those skilled in the art to practice theinvention. Other embodiments may be utilized and structural, logical,and electrical changes may be made.

FIG. 1 includes a block diagram of a memory device 100 according tovarious example embodiments of the current invention. The memory device100 operates to substantially concurrently transfer a plurality ofoutbound and/or inbound streams of commands, addresses, and/or databetween one or more originating devices and/or destination devices(e.g., a host, such as one comprising one or more processors) and a setof stacked-array memory “vaults” 110. Increased memory system density,bandwidth, parallelism, and scalability may result.

Multi-die memory array embodiments aggregate control logic that isnormally located on each individual memory array die in previousdesigns. Subsections of a stacked group of dies, referred to in thepresent disclosure as memory vaults are shown as example vault 110 inFIG. 1 and as example vault 230 in FIG. 2. The memory vaults shown inthe illustrated examples share common control logic. The memory vaultarchitecture strategically partitions memory control logic to increaseenergy efficiency while providing a finer granularity of powered-onmemory banks. Embodiments shown also enable a standardized hostprocessor to memory system interface. The standardized interface mayreduce re-design cycle times as memory technology evolves.

FIG. 2 is a cut-away conceptual view of a stacked-die 3D memory array200 stacked with a logic die 202 to form a memory device 100 accordingto various example embodiments. The memory device 100 incorporates oneor more stacks of memory arrays 203 resulting in the stacked-die 3Dmemory array 200. Multiple memory arrays (e.g., the memory array 203)are fabricated onto each of a plurality of dies (e.g., the die 204). Thememory array dies are then stacked to form the stacked-die 3D memoryarray 200.

Each die of the stack is divided into multiple “tiles” (e.g., the tiles205A, 205B, and 205C associated with the stacked die 204). Each tile(e.g., the tile 205C) may include one or more memory arrays 203. Thememory arrays 203 are not limited to any particular memory technologyand may include dynamic random-access memory (DRAM), static randomaccess memory (SRAM), flash memory, etc.

A stacked set of memory array tiles 208 may include a single tile fromeach of the stacked dies (e.g., the tiles 212B, 212C and 212D, with thebase tile hidden from view in FIG. 1). Power, address, and/or data andsimilar common signals may traverse the stacked set of tiles 208 in the“Z” dimension 220 on conductive paths (e.g., the conductive path 224)such as “through-wafer interconnects” (TWIs). It is noted that a TWIneed not necessarily pass entirely through a particular wafer or die.

The stacked-die 3D memory array 200 in one configuration is partitionedinto a set of memory “vaults” (e.g., the memory vault 230). Each memoryvault includes a stacked set of tiles (e.g., the set of tiles 208), onetile from each of a plurality of stacked dies, together with a set ofTWIs to electrically interconnect the set of tiles 208. Each tile of thevault includes one or more memory arrays (e.g., the memory array 240).Although partitions into individual vaults 230 are described, the 3Dmemory array 200 can be partitioned in a number of other ways also.Other example partitions include partitioning by dies, tiles, etc.

A set of memory vaults 102, similar to the memory vaults 230 from FIG.2, is illustrated in FIG. 1 in context within the memory device 100. Thememory device 100 also includes a plurality 104 of memory vaultcontrollers (MVCs) (e.g., the MVC 106). Each MVC is communicativelycoupled to a corresponding memory vault (e.g., the memory vault 110 ofthe set 102) in a one-to-one relationship. Each MVC is thus capable ofcommunicating with a corresponding memory vault independently fromcommunications between other MVCs and their respective memory vaults.

The memory device 100 also includes a plurality of configurableserialized communication link interfaces (SCLIs) 112. The SCLIs 112 aredivided into an outbound group of SCLIs 113 and an inbound group ofSCLIs 115, where “outbound” and “inbound” directions are defined fromthe perspective of the processor(s) 114. Each SCLI of the plurality ofSCLIs 112 is capable of concurrent operation with the other SCLIs.Together the SCLIs 112 communicatively couple the plurality of MVCs 104to one or more processor(s) 114. The memory device 100 presents amulti-link, high-throughput interface to the host processor(s) 114.

The memory device 100 may also include a switch 116. In someembodiments, the switch 116 may comprise a matrix switch which mightalso be referred to as a cross connect switch. The switch 116 iscommunicatively coupled to the plurality of SCLIs 112 and to theplurality of MVCs 104. The switch 116 is capable of cross-connectingdirectly to each SCLI to a selected MVC. The host processor(s) 114 maythus access the plurality of memory vaults 102 across the plurality ofSCLIs 112 in a substantially simultaneous fashion. This architecture canprovide high processor-to-memory bandwidth for modern processortechnologies, including multi-core technologies.

The memory device 100 may also include a memory fabric control register117 coupled to the switch 116. The memory fabric control register 117accepts memory fabric configuration parameters from a configurationsource and configures one or more components of the memory device 100 tooperate according to a selectable mode. For example, the switch 116 andeach of the plurality of memory vaults 102 and the plurality of MVCs 104may normally be configured to operate independently of each other inresponse to separate memory requests. Such a configuration can enhancememory system bandwidth as a result of the parallelism between the SCLIs112 and the memory vaults 102.

Alternatively, the memory device 100 may be reconfigured via the memoryfabric control register 117 to cause a subset of two or more of theplurality of memory vaults 102 and a corresponding subset of MVCs tooperate synchronously in response to a single request. The latterconfiguration may be used to access a data word that is wider than thewidth of a data word associated with a single vault. Such a word isherein referred to as a wide data word. This technique may decreaselatency. Other configurations may be enabled by loading a selected bitpattern into the memory fabric control register 117.

In one example the outbound SCLIs 113 may include a plurality ofoutbound differential pair serial paths (DPSPs) 128. The DPSPs 128 arecommunicatively coupled to the host processor(s) 114 and maycollectively transport an outbound packet. The outbound SCLI 113 mayalso include a deserializer 130 coupled to the plurality of outboundDPSPs 128. The outbound SCLI may also include a demultiplexer 138communicatively coupled to the deserializer 130. In one embodiment, theconfiguration of DSPSs, deserializers, and demultiplexers facilitatesefficient transfer of data packets or sub-packets. Similar to theoutbound SLCIs, in one embodiment, the inbound SCLIs and a similarconfiguration of DSPSs, serializers, and multiplexers facilitateefficient transfer of data packets or sub-packets.

FIG. 3 is a block diagram of an MVC (e.g., the MVC 106) and associatedmodules according to various example embodiments. The MVC 106 mayinclude a programmable vault control logic (PVCL) component 310. ThePVCL 310 interfaces the MVC 106 to the corresponding memory vault (e.g.,the memory vault 110). The PVCL 310 generates one or more controlsignals and/or timing signals associated with the corresponding memoryvault 110.

The PVCL 310 may be configured to adapt the MVC 106 to a memory vault110 of a selected configuration or a selected technology. Thus, forexample, the memory device 100 may initially be configured usingcurrently-available DDR2 DRAMs. The memory device 100 may subsequentlybe adapted to accommodate DDR3-based memory vault technology byreconfiguring the PVCL 310 to include DDR3 bank control and timinglogic.

The MVC 106 includes a memory sequencer 314 communicatively coupled tothe PVCL 310. The memory sequencer 314 performs a memory technologydependent set of operations based upon the technology used to implementthe associated memory vault 110. The memory sequencer 314 may, forexample, perform command decode operations, memory address multiplexingoperations, memory address demultiplexing operations, memory refreshoperations, memory vault training operations, and/or memory vaultprefetch operations associated with the corresponding memory vault 110.In some embodiments, the memory sequencer 314 may comprise a DRAMsequencer. In some embodiments, memory refresh operations may originatein a separate refresh controller (not shown).

The memory sequencer 314 may be configured to adapt the memory device100 to a memory vault 110 of a selected configuration or technology. Forexample, the memory sequencer 314 may be configured to operatesynchronously with other memory sequencers associated with the memorydevice 100. Such a configuration may be used to deliver a wide data wordfrom multiple memory vaults to a cache line (not shown) associated withthe host processor(s) 114 in response to a single cache line request.

The MVC 106 may also include a write buffer 316. The write buffer 316may be coupled to the PVCL 310 to buffer data arriving at the MVC 106from the host processor(s) 114. The MVC 106 may further include a readbuffer 317. The read buffer 317 may be coupled to the PVCL 310 to bufferdata arriving at the MVC 106 from the corresponding memory vault 110.

The MVC 106 may also include an out-of-order request queue 318. Theout-of-order request queue 318 establishes an ordered sequence of readand/or write operations to the plurality of memory banks included in thememory vault 110. The ordered sequence is chosen to avoid sequentialoperations to any single memory bank in order to reduce bank conflictsand to decrease read-to-write turnaround time.

The MVC 106 may also include a memory repair logic (MRL) component 324.The MRL 324 can manage a number of operations such as TWI repairoperations using TWI repair logic 328, or other repair operations.

FIG. 4 illustrates a method of operation according to an embodiment ofthe invention. In operation 410, a first number of first links coupledto a host are selected. An example of first links includes SCLIs 112 asdescribed above. Each first link has an individual bandwidth. When afirst number of first links are selected to operate together, thebandwidth of the combined first links is increased.

In operation 420, a second number of second links coupled to respectivememory vaults in the plurality of memory vaults of the stack areselected. An example of second links includes links 120 as illustratedin FIG. 1. In the FIG. 1 example, the second links 120 couple respectiveones of the MVC's 104 to each associated memory vault 102 in thestacked-die 3D memory array 200. Although memory vaults are recited asportions of the stacked-die 3D memory array 200, other portions such asdies 204, tiles 205, etc. are possible.

In operation 430, the selected first number of first links and theselected second number of second links are coupled together to provide amemory bandwidth between the stack of memory dies and the host. Againusing FIG. 1 as an example, a selected number of first links 112 and aselected number of second links 120 are coupled to provide a memorybandwidth between the stacked-die 3D memory array 200 and the host 114.

Example embodiments include coupling one first link 112 to multiplesecond links 120 to provide access to multiple vaults 110 in parallel.Another example embodiment includes coupling one second link 120 tomultiple first links 112 to provide more bandwidth from a single givenvault 110 than available with only a single first link 112. Otherexamples include combinations of multiple first links 112 and secondlinks 120 to provide a number of bandwidth combinations both in terms ofmultiple vaults 110, and multiple first links 112.

A switch 116 is shown in FIG. 1 that is used to couple the number offirst links 112 to the number of second links 120. In one example, theswitch 116 is a dynamic link controller that is able to vary memorybandwidth to portions of the stacked-die 3D memory array 200 duringmemory operation. An example of a dynamic link controller includes acrossbar switch that directly connects any first link or links to anysecond link or links. In another example, the dynamic link controllerincludes one local direct connection between a first link and a secondlink, with a plurality of buffered connections between a given firstlink and other remote second links. This example embodiment is describedin more detail with respect to FIG. 5 below.

In another example, switch 116 is a static controller that sets memorybandwidth to portions of the stacked-die 3D memory array 200 once atmanufacture, or once at device startup. In an example staticconfiguration, a link configuration register such as the memory fabriccontrol register 117 is used to configure the bandwidth once atmanufacture, upon startup, or another event such as device reset.

In one example, a desired configuration, such as a static configurationor a dynamic configuration as described above, is sent from the host 114through a path 122 to the memory fabric control register 117. In oneembodiment, the desired configuration is sent from a memory map. In amemory map configuration, regions of memory address space can be mappedto be serviced by one or multiple vaults. In selected examples thememory map can be located on the logic chip 202, in the host 114 asdescribed above, or other locations external to the memory device 100.

Memory devices and systems as described above can be configured to matchbandwidth to various types of memory operations. For example, multiplelinks can be combined to provide one wide bandwidth path, or links canbe divided up to create a larger number of smaller bandwidth paths. Inone application, smaller bandwidth paths are used to conserve power,while in another application wider bandwidth paths are used to providespeed.

In one example, multiple links are combined to dynamically provide awrite bandwidth that is different from a read bandwidth. Commonly, readoperations take different amounts of time from write operations in amemory system. By combining links to vary bandwidth from a write to aread operation, a speed of a write operation can be adjusted tosubstantially match a speed of a read operation. In one embodiment, aread to write ratio of operation speed in a given memory device isdetermined. In one embodiment, the read to write ratio is then stored ina register, and during device operation, bandwidth is varied betweenread operations and write operations based on the value stored in theregister. In one example, the register is located on the memory device100 such as in the logic die as described in embodiments above. Othermethods to keep track of the read to write ratio are also possible, suchas storing the ratio within the host 114, or in a register at adifferent location.

FIG. 5 shows an example of another memory device 500. A host 514 isshown coupled to the memory device 500 by a number of first links 512. Astacked-die 3D memory array 501, similar to embodiments above, is showncoupled to a logic die 502 by a number of second links 520. In theembodiment of FIG. 5, each first link 512 includes one direct connectionto a portion of the stacked-die 3D memory array 501, such as a memoryvault. Each first link 512 can also be selectively coupled to any otherportion such as a vault through a dynamic link controller 522 thatbuffers information exchange to remote memory portions such as vaults.Each buffered connection 524 is shown coupling between the dynamic linkcontroller 522 and a local switch such as an MVC 506 similar toembodiments described above.

Embodiments with both direct local connections and buffered remoteconnections provide fast local access, while also providing powersavings over examples such as a full crossbar link controller. Powersavings are facilitated as a result of the buffer operation to remotevaults or other memory portions.

The apparatus and systems of various embodiments may be useful inapplications other than a high-density, multi-link, high-throughputsemiconductor memory subsystem. Thus, various embodiments of theinvention are not so limited. The illustrations of the memory device 100are intended to provide a general understanding of the structure ofvarious embodiments. They are not intended to serve as a completedescription of all the elements and features of apparatus and systemsthat can use the structures described herein.

As discussed above, systems are described in the present disclosure thatinclude 3D memory devices and processors. Examples of such systems,include, but are not limited to televisions, cellular telephones,personal data assistants (PDAs), personal computers (e.g., laptopcomputers, desktop computers, handheld computers, tablet computers,etc.), workstations, radios, video players, audio players (e.g., MP3(Motion Picture Experts Group, Audio Layer 3) players), vehicles,medical devices (e.g., heart monitor, blood pressure monitor, etc.), settop boxes, and others.

A high level example of a personal computer is included in FIG. 6 toshow one possible higher level device application for the presentinvention. FIG. 6 is a block diagram of an information handling system600 incorporating at least one memory device 606 according to anembodiment of the invention.

In this example, information handling system 600 comprises a dataprocessing system that includes a system bus 602 to couple the variouscomponents of the system. System bus 602 provides communications linksamong the various components of the information handling system 600 andmay be implemented as a single bus, as a combination of busses, or inany other suitable manner.

Chip assembly 604 is coupled to the system bus 602. Chip assembly 604may include any circuit or operably compatible combination of circuits.In one embodiment, chip assembly 604 includes a processor 608 ormultiple processors that can be of any type. As used herein, “processor”means any type of computational circuit such as, but not limited to, amicroprocessor, a microcontroller, a graphics processor, a digitalsignal processor (DSP), or any other type of processor or processingcircuit. As used herein, “processor” includes multiple processors ormultiple processor cores.

In one embodiment, a memory device 606 is included in the chip assembly604. A memory device such as a DRAM is one example of such a memorydevice 606. One example of a DRAM device includes a stacked memory chip3D memory device with an integrated logic chip as described inembodiments above. Memory 606 can also include non-volatile memory suchas flash memory.

Information handling system 600 may also include an external memory 611,which in turn can include one or more memory elements suitable to theparticular application, such as one or more hard drives 612, and/or oneor more drives that handle removable media 613 such as flash memorydrives, compact disks (CDs), digital video disks (DVDs), and the like.

Information handling system 600 may also include a display device 509such as a monitor, additional peripheral components 610, such asspeakers, etc. and a keyboard and/or controller 614, which can include amouse, trackball, game controller, voice-recognition device, or anyother device that permits a system user to input information into andreceive information from the information handling system 600.

While a number of embodiments of the invention are described, the abovelists are not intended to be exhaustive. Although specific embodimentshave been illustrated and described herein, it will be appreciated bythose of ordinary skill in the art that any arrangement that iscalculated to achieve the same purpose may be substituted for thespecific embodiment shown. This application is intended to cover anyadaptations or variations of the present invention. It is to beunderstood that the above description is intended to be illustrative andnot restrictive. Combinations of the above embodiments, and otherembodiments, will be apparent to those of skill in the art uponreviewing the above description.

1. A memory device, comprising: a stack of memory dies, including anumber of memory portions within the stack of memory dies; a logic diestacked with the stack of memory dies, and comprising; first linkswithin the logic die to couple to an originating and/or destinationdevice; second links coupled to the memory portions; and a switch tocouple a selected number of the first links to a selected number of thesecond links to vary bandwidth between the memory portions and theoriginating and/or destination device.
 2. The memory device of claim 1,wherein the switch includes one local direct connection between a firstlink and a second link, with a plurality of buffered connections betweena given first link and other remote second links.
 3. The memory deviceof claim 2, further including a number of vault controllers coupled toeach of the number of memory portions, wherein each vault controller iscoupled to one local direct connection, and one buffered connection. 4.The memory device of claim 1, wherein the number of memory portionswithin the stack of memory dies includes a number of memory vaults. 5.The memory device of claim 1, wherein the switch is adapted to configurebandwidth in the memory device at manufacture.
 6. The memory device ofclaim 1, wherein the switch is adapted to configure bandwidth in thememory device upon reset of the memory device.
 7. The memory device ofclaim 1, wherein the switch is adapted to dynamically configurebandwidth in the memory device during operation.
 8. The memory device ofclaim 1, wherein the switch includes a link configuration registerlocated on the logic die to configure the bandwidth.
 9. The memorydevice of claim 8, wherein the link configuration register is configuredto set the selected number of the first links to the selected number ofthe second links upon startup.
 10. The memory device of claim 8, whereinthe link configuration register is configured to set the selected numberof the first links to the selected number of the second links upondevice reset.
 11. A memory device, comprising: a stack of memory dies; alogic die stacked with the stack of memory dies, the logic diecomprising a number of links coupled to portions of the stack of memorydies, and a variable number of links to couple to an originating and/ordestination device; and a switch to select a number of portions of thestack of memory dies to operate in parallel.
 12. The memory device ofclaim 11, wherein the switch is located on the logic die.
 13. The methodof claim 11, wherein the switch is located external to the memorydevice.
 14. A method of setting memory bandwidth, comprising: selectinga number of first links coupled to an originating and/or destinationdevice; selecting a second number of second links coupled to respectiveones of a plurality of memory vaults in a stack of memory dies; andcoupling the selected number of first links to the selected number ofsecond links to provide a memory bandwidth between the stack of memorydies and the device.
 15. The method of claim 14, wherein selection ofthe first number of first links and the number of second links is variedduring memory operation.
 16. The method of claim 14, wherein selectionof the number of first links and the number of second links includesselecting multiple links coupled to a first portion of the stack ofmemory to provide at least one wide bandwidth path, and in a secondportion of the stack of memory dies, selecting a single link to form anarrow bandwidth path to the second portion.
 17. The method of claim 14,further comprising receiving instruction from a memory map, wherein theselecting acts are performed at least partially in response to theinstruction.
 18. The method of claim 17, wherein receiving instructionfrom a memory map includes receiving instruction from a memory maplocated in a location external to the memory device.
 19. The method ofclaim 17, wherein receiving instruction from a memory map includesreceiving instruction from a memory map located on a logic chip stackedwith the stack of memory dies.
 20. The method of claim 17, whereinreceiving instruction from a memory map includes receiving instructionfrom a memory map located in the originating and/or destination device.21. A method of setting memory bandwidth, comprising: selecting a numberof first links coupled to an originating and/or destination device;selecting a second number of second links coupled to respective ones ofa plurality of memory vaults in a stack of memory dies; coupling theselected number of first links to the selected number of second links toprovide a write bandwidth between the stack of memory dies and thedevice; and changing the selected number of first links to the selectednumber of second links during a read operation to provide a readbandwidth different from the write bandwidth.
 22. The method of claim21, wherein changing the selected number of first links to the selectednumber of second links during a read operation to provide a readbandwidth includes providing a read bandwidth to substantially match aread speed to a write speed.
 23. The method of claim 21, further settinga register in the memory device to a selected read to write ratio. 24.The method of claim 23, wherein the register is set upon device startup.25. The method of claim 23, wherein the register is set upon devicereset.